▎ 摘　　要

NOVELTY - The device (450) has contacts (420a, 420b) formed in a doped semiconductor substrate (410a). A graphene layer (430) is formed on the substrate and the contacts. Other contacts (440a, 440b) are formed on the graphene layer such that the graphene layer is formed between two contacts. Edges (421, 422) of the former contacts are aligned with edges (441, 442) of the latter contacts along horizontal direction. The substrate serves as a back gate for an FET. The graphene layer serves as a channel layer for the FET. USE - Semiconductor device i.e. graphene FET. ADVANTAGE - The device allows double-contact geometry e.g. metal contact below the graphene layer and metal contact above the graphene layer, at a source and a drain in a graphene FET, thus improving performance of the device. The graphene layer reduces contact resistance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) an FET for forming a semiconductor device (2) a method for forming a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a semiconductor device. Doped semiconductor substrates (410a, 410b) contacts (420a, 420b, 440a, 440b) Edges of contacts (421, 422, 441, 442) Graphene layer (430) Semiconductor device (450)