• 专利标题:   Semiconductor device i.e. graphene FET, has graphene layer formed on doped semiconductor substrate and contacts and for serving channel layer for FET, where doped semiconductor substrate serves as back gate for FET.
  • 专利号:   US2013248823-A1, US9064842-B2
  • 发明人:   BOL A A, FRANKLIN A D, HAN S
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L021/335, H01L029/775, C01B031/04, H01L021/02, H01L029/16, H01L029/417, H01L029/778
  • 专利详细信息:   US2013248823-A1 26 Sep 2013 H01L-029/775 201365 Pages: 17 English
  • 申请详细信息:   US2013248823-A1 US425302 20 Mar 2012
  • 优先权号:   US425302

▎ 摘  要

NOVELTY - The device (450) has contacts (420a, 420b) formed in a doped semiconductor substrate (410a). A graphene layer (430) is formed on the substrate and the contacts. Other contacts (440a, 440b) are formed on the graphene layer such that the graphene layer is formed between two contacts. Edges (421, 422) of the former contacts are aligned with edges (441, 442) of the latter contacts along horizontal direction. The substrate serves as a back gate for an FET. The graphene layer serves as a channel layer for the FET. USE - Semiconductor device i.e. graphene FET. ADVANTAGE - The device allows double-contact geometry e.g. metal contact below the graphene layer and metal contact above the graphene layer, at a source and a drain in a graphene FET, thus improving performance of the device. The graphene layer reduces contact resistance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) an FET for forming a semiconductor device (2) a method for forming a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a semiconductor device. Doped semiconductor substrates (410a, 410b) contacts (420a, 420b, 440a, 440b) Edges of contacts (421, 422, 441, 442) Graphene layer (430) Semiconductor device (450)