• 专利标题:   Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.
  • 专利号:   WO2013104138-A1, CN103204493-A, CN103204493-B
  • 发明人:   XIA Y, LI C, XIE J, LUO W, ZHANG Y
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01L021/20, C01B031/04
  • 专利详细信息:   WO2013104138-A1 18 Jul 2013 H01L-021/20 201350 Pages: 18 Chinese
  • 申请详细信息:   WO2013104138-A1 WOCN071311 20 Feb 2012
  • 优先权号:   CN10009208

▎ 摘  要

NOVELTY - Preparation of graphene wafer involves activating a substrate, in which graphene wafer is to-be-deposited, controlling the thickness of graphene by an ion-implantation process, contacting the substrate with the surface of the graphite, and applying an external physical field to peel the graphene wafer from the surface of the graphite material and deposit the graphene wafer onto the surface of the substrate. USE - Preparation of graphene wafer. ADVANTAGE - A high quality graphene is produced on substrate by simple method with improved reproducibility. The thickness and size of the prepared graphene wafer are controlled easily.