• 专利标题:   Heat dissipation structure using graphene quantum dots, has heat dissipation film which is placed on heating element to dissipate heat generated from heating element, to outside.
  • 专利号:   US2018061734-A1, EP3291294-A1, CN107768331-A, KR2018022099-A
  • 发明人:   LEE D, KIM S, SEOL M, JEONG S, NAM S, PARK S, SHIN H, XUE M, ZHENG C, NA S, LEE D W, KIM S W, SEOL M S, JEONG S J, NAM S G, PARK S J, SHIN H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/48, H01L023/31, H01L023/373, B82Y030/00, B82Y040/00, H01L023/42, H01L023/498
  • 专利详细信息:   US2018061734-A1 01 Mar 2018 H01L-023/373 201818 Pages: 14 English
  • 申请详细信息:   US2018061734-A1 US497683 26 Apr 2017
  • 优先权号:   KR106980

▎ 摘  要

NOVELTY - The heat dissipation structure has a heating element. A heat dissipation film (520) is placed on the heating element to dissipate heat generated from the heating element, to outside. The heat dissipation film includes graphene quantum dots (GQDs). The heat dissipation film further includes at least one of graphene, carbon nanotubes (CNTs), and graphene oxide. USE - Heat dissipation structure using graphene quantum dots. ADVANTAGE - The GQDs are used in a variety of technical fields, e.g., bioimaging, drug delivery, photodetectors, solar cells, and biosensors due to chemical and physical properties, e.g., a high electrical conductivity, a high surface area, an excellent corrosion resistance, and a high chemical stability. The heat dissipation film including the GQDs is used, excellent heat dissipation properties is achieved. The heat dissipation film including the GQDs is used, heat generated from the heating element is efficiently dissipated to outside. The heat dissipation film is provided directly on the top surface of the semiconductor chip without an adhesive layer intervening, heat dissipation properties are improved and the heat dissipation structure serving as a semiconductor package has a small thickness. The heat dissipation properties of the heat dissipation film are further improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a heat dissipation structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view for describing a method of manufacturing a heat dissipation structure. Semiconductor substrate (510) First surface (510a) Heat dissipation film (520) Solution (520B) Semiconductor chip (540)