• 专利标题:   Microwave power synthesis system useful in microwave plasma chemical vapor deposition reaction system in film deposition field, comprises e.g. power synthesis chamber used for synthesizing microwave fed by microwave feed ports after injection locking frequency and injection adjusting phase.
  • 专利号:   CN115764221-A, CN218919258-U
  • 发明人:   ZHONG N, HUANG M
  • 专利权人:   CHENGDU HONGZUAN TECHNOLOGY CO LTD
  • 国际专利分类:   C23C016/511, H01P001/18, H01P001/38, H01P005/12, H01P005/18, H05H001/46
  • 专利详细信息:   CN115764221-A 07 Mar 2023 H01P-005/12 202323 Chinese
  • 申请详细信息:   CN115764221-A CN11270433 18 Oct 2022
  • 优先权号:   CN11270433, CN22736129

▎ 摘  要

NOVELTY - Microwave power synthesis system comprises a microwave solid signal source injected into a magnetron through a circulator through a microwave signal output after the power division of the power divider to lock the frequency of the microwave generated by the magnetron, and the microwave after locking frequency is coupled the directional coupler to the power synthesis system. A phase adjusting system is provided with a phase shifter, which is connected with the power divider for adjusting the phase of each path of microwave output through the power divide. The power synthesis chamber is used for synthesizing the microwave fed by the microwave feed ports after injection locking frequency and injection adjusting phase. USE - The microwave power synthesis system is useful in microwave plasma chemical vapor deposition reaction system in film deposition field e.g. diamond field and graphene field. ADVANTAGE - The system has high ionization degree equal to the high power microwave source and excitation plasma density, is suitable for depositing various single crystal, polycrystalline or composite material, especially deposited diamond, carbon nitride and high hardness, can provide the best deposition temperature for synthesizing diamond and other materials, improves deposition rate, is economical, has maximum electric field intensity, increases field focusing on sample table placed in the microwave plasma reaction cavity, and realizes extremely high microwave synthesis efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a microwave plasma chemical vapor deposition reaction system. DESCRIPTION OF DRAWING(S) - The drawing shows a flow block diagram of the microwave power synthesis system (Drawing includes non-English language text).