• 专利标题:   Interconnect structure used in electronic device, comprises dielectric layer, conductive interconnect on dielectric layer and graphene cap layer on conductive interconnect, where graphene cap layer contains graphene quantum dots.
  • 专利号:   US2022399228-A1, KR2022167105-A
  • 发明人:   SHIN H, BYUN K, KIM S, SEOL M, SHIN K, SHIN K W, BYUN K E, SHIN H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/768, H01L023/532
  • 专利详细信息:   US2022399228-A1 15 Dec 2022 H01L-021/768 202302 English
  • 申请详细信息:   US2022399228-A1 US545468 08 Dec 2021
  • 优先权号:   KR076233

▎ 摘  要

NOVELTY - Interconnect structure comprises a dielectric layer, a conductive interconnect on the dielectric layer and a graphene cap layer on the conductive interconnect. The graphene cap layer contains graphene quantum dots, and has a carbon content of 80 wt.% or more and an oxygen content of 15 wt.% or less. USE - Interconnect structure used in electronic device (claimed). ADVANTAGE - The interconnect structure is used for reducing the resistance of a conductive interconnect and limiting and/or preventing the deterioration of electrical by maintaining the dielectric constant of a dielectric layer without changing the composition of a cap layer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: An electronic device, which comprises a substrate and an interconnect structure on the substrate, where the interconnect structure has a dielectric layer, a conductive interconnect on the dielectric layer, and a graphene cap layer on the conductive interconnect. A method for manufacturing an interconnect structure, which involves: preparing a dielectric layer, placing a conductive interconnect on the dielectric layer, applying a graphene-containing composition onto the conductive interconnect, and drying the graphene-containing composition to form a graphene cap layer on the conductive interconnect. An interconnect structure, which comprises a dielectric layer, and a graphene cap layer facing the dielectric layer, and a conductive interconnect connected to the dielectric layer and the graphene cap layer. DESCRIPTION OF DRAWING(S) - The drawing shows schematic cross-sectional view of an interconnect structure. 110Dielectric layer 120Conductive interconnect 130Graphene cap layer 140Substrate