▎ 摘　　要

NOVELTY - The device has a graphene layer (12) arranged on a SiC layer (11), where a surface (34) of the graphene layer is formed on a source electrode (24) and a drain electrode (26). The gate electrode is provided on the surface of the graphene layer. The source electrode is arranged between the drain electrodes. The graphene layer is provided on a surface (36) of a main body. A gate insulating film (14) is arranged on an aluminum oxide film (16) that is provided between the graphene layer and the gate electrode. USE - Semiconductor device for a field effect transistor. ADVANTAGE - The source electrode is arranged between the drain electrodes and the graphene layer is provided on the surface of the main body, so that performance of the device can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a field effect transistor. SiC layer (11) Graphene layer (12) Gate insulating film (14) Aluminum oxide film (16) Source electrode (24) Drain electrode (26) Surface of graphene layer (34) Surface of main body (36)