▎ 摘　　要

NOVELTY - The method comprises establishing a conductive filament growth/dissolution model by combining the migration and temperature of oxygen, dividing the model into set, reset process, set process includes conductive filament longitudinal growth, determining the conductivity model of the graphene electrode and conductive filament according to the conservation law of the oxygen atom and oxygen vacancy, using two different current models to respectively calculate the current of the conductive filament contact graphene the conductive filament and non-contact graphene electrode of the conductive filament, establishing a self-heating effect model according to the obtained current and voltage data, and obtaining the device heat source area average temperature. USE - Method for constructing compact model of resistance-change memory taking graphene as electrode used in field of brain-like chip and new memory. ADVANTAGE - The method: can adjust the compact model based on the physical principle; has short simulation time; can pass through the conductive filament growth model with accurate temperature dependence; can more truly reflect the resistance characteristics of the electrode graphene change memory under different working conditions, which can be used for the design simulation research of the graphene electrode change memory in the integrated circuit; has more accurate calculation of the memory resistance; can greatly reduce simulation time and calculation resource of the resistance change memory model by established compact model compared with the numerical simulation. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: A compact model of resistance-change memory using graphene as electrode; and A simulation method of resistance-change memory using graphene as motor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the method for constructing compact model of resistance-change memory taking graphene as electrode (Drawing includes non-English language text).