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  • 专利标题:   Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.
  • 专利号:   US2013288457-A1, JP2013229601-A, CN103378224-A, TW201344950-A, JP5596204-B2, US8900977-B2, TW517434-B1, CN103378224-B
  • 发明人:   WEI Y, FAN S, GI Y, FAN F Y
  • 专利权人:   WEI Y, FAN S, UNIV TSINGHUA, HON HAI PRECISION IND CO LTD, HONGFUJIN PRECISION IND SHENZHEN CO LTD, UNIV TSINGHUA, HON HAI PRECISION IND CO LTD
  • 国际专利分类:   H01L021/36, C01B031/02, C23C016/04, C30B023/04, H01L021/203, H01L021/205, H01L033/00, H01L033/02, H01L021/20
  • 专利详细信息:   US2013288457-A1 31 Oct 2013 H01L-021/36 201376 Pages: 24 English
  • 申请详细信息:   US2013288457-A1 US676026 13 Nov 2012
  • 优先权号:   CN10122618

▎ 摘　　要

NOVELTY - The method involves providing a substrate (200) having an epitaxial growth surface. A graphene layer (202) is formed on the epitaxial growth surface. An epitaxial layer (204) is epitaxially grown on the epitaxial growth surface. The graphene layer is provided with graphene powder or graphene film. The patterns are created on the graphene film. USE - Method for manufacturing epitaxial structure of light emitting device such as LED. ADVANTAGE - The process of lithography and etching is simplified. The process is low in cost. DESCRIPTION OF DRAWING(S) - The drawing shows an exploded perspective view illustrating manufacturing process of the epitaxial structure. Epitaxial structure (20) Substrate (200) Graphene layer (202) Epitaxial layer (204)