• 专利标题:   Semiconductor ceramic glaze includes limestone, feldspar, quartz, fly ash, zinc oxide, nano titania, iron ore, antimony trioxide, nano silver, spodumene, carboxymethylcellulose, graphene, and water-based rheological additive.
  • 专利号:   CN106986543-A
  • 发明人:   GUO C, CHEN J, CHEN Y, YU P, YU Q, GAN D
  • 专利权人:   LESHAN KAIYADA OPTOELECTRONIC TECHNOLOGY
  • 国际专利分类:   C03C008/20, C04B041/86
  • 专利详细信息:   CN106986543-A 28 Jul 2017 C03C-008/20 201774 Pages: 4 Chinese
  • 申请详细信息:   CN106986543-A CN10285837 27 Apr 2017
  • 优先权号:   CN10285837

▎ 摘  要

NOVELTY - Semiconductor ceramic glaze comprises 20-30 pts. wt. limestone, 40-50 pts. wt. feldspar, 40-50 pts. wt. quartz, 30-50 pts. wt. fly ash, 5-10 pts. wt. zinc oxide, 10-15 pts. wt. nano titania, 25-30 pts. wt. iron ore, 8-12 pts. wt. antimony trioxide, 5-10 pts. wt. nano silver, 5-10 pts. wt. spodumene, 15-20 pts. wt. carboxymethylcellulose, 3-8 pts. wt. graphene, and 8-12 pts. wt. water-based rheological additive. USE - Semiconductor ceramic glaze. ADVANTAGE - The semiconductor ceramic glaze has good electrical conductivity, has good melting performance, has low thermal expansion coefficient, has high mechanical strength, provides smooth glaze, has good anti-aging ability, and has long service life.