▎ 摘　　要

NOVELTY - Preparing graphene electro conductive thin film involves depositing nickel layer of thickness 1-3 atoms thickness on the glass substrate by performing magnetron sputtering at substrate temperature of 50-85 degrees C, vacuum degree of 1x 10-5-1x 10-4 and pressure of 1-5 pascals. Graphene is deposited by chemical vapor deposition forming film layer of thickness 50-100 mu m. The graphene and nickel coated glass substrate is cooled down to room temperature. The graphene film layer is washed to remove the surface nickel film layer and then dried. USE - Method for preparing graphene electro conductive thin film (claimed). ADVANTAGE - The method enables efficient preparation of graphene electro conductive thin film in cost effective manner.