▎ 摘　　要

NOVELTY - Preparation of side gating graphene field-effect transistor structure involves placing copper foil in a reaction chamber, vacuumizing the reaction chamber at 90-130 degrees C, and performing thermal annealing on the copper foil for 2-60 minutes, growing the graphene by chemical vapor deposition, transferring the graphene to high-dielectric constant substrate, utilizing a lithography machine to expose source drain and side gating positions, and etching graphene at the side gating positions using an oxygen plasma etching machine with etching power of 100-1000W for 5-70 seconds. USE - Preparation of side gating graphene field-effect transistor structure (claimed). ADVANTAGE - The method efficiently and economically forms side gating graphene field-effect transistor structure. The modulation capability of side gating on a graphene conducting channel is improved. DETAILED DESCRIPTION - Preparation of side gating graphene field-effect transistor structure involves placing copper foil in a reaction chamber, vacuumizing the reaction chamber at 90-130 degrees C, and performing thermal annealing on the copper foil for 2-60 minutes, growing the graphene by chemical vapor deposition, transferring the graphene to high-dielectric constant substrate, utilizing a lithography machine to expose source drain and side gating positions, utilizing an oxygen plasma etching machine to etch the graphene at the side gating positions with etching power of 100-1000W for 5-70 seconds, cooling to room temperature, evaporating metal on sample by using an E-beam device, enabling the sample such that the to-be-placed metal is evaporated in acetone to perform ultrasonography, maintaining the vacuum degree of 2.1-6 Torr, then rinsing the sample in absolute ethyl alcohol, washing sample using deionized water, and finally drying sample using pure nitrogen.