▎ 摘　　要

NOVELTY - The FET has a graphene conductive layer formed with a gate oxide layer and a semi-conductor layer. The semi-conductor layer is formed with a channel area and a cell area. USE - Insulation gate FET. ADVANTAGE - The FET reduces power consumption and occupies less space. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an insulation gate FET manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating an insulation gate FET manufacturing method.'(Drawing includes non-English language text)'