▎ 摘　　要

NOVELTY - Preparation of single-crystal graphene comprises affixing graphite crystal to base area using tear tape to obtain seed layer, coating layer with nickel alloy and/or copper alloy with thickness of 10-20 mu m, covering with carbon source, heating in furnace to 200-400 degrees C with maintained pressure of 1.01x 105 Pa, reacting under protective atmosphere of argon, nitrogen, helium or neon gases, annealing for 100 seconds-1 hour, cooling to room temperature, immersing in iron chloride solution and removing metal layer and carbon source. USE - Method for preparing single-crystal graphene (claimed).