▎ 摘　　要

NOVELTY - The method involves constructing a base heating microchip structure based on a silicon insulating insulator (SOI) wafer, where the substrate structure comprises a copper layer, a silicon dioxide layer and a silicon layer. Current is inputted to the silicon layer of the substrate substrate structure to solve a heating curve. An influence of a resistor layer on the silica layer is analyzed according to the heating curve, and a resistivity of a proper silicon layer is determined. A doping of the silicon layers is determined according to resistivity. Length and width of a substrate structure are determined under the premise of fixing thickness of each layer of substrate structure, respectively length and width. A corresponding heating curve is solved. A thermoelectric simulation is performed on substrate structure on a finite element analysis software to verify whether it meets the requirements. USE - Method for designing uCVD graphene preparation thermoelectric heat extracting platform ADVANTAGE - The method solves the technical problem of low design efficiency of heating platform. The method solves the technical problems of high design efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a uCVD graphene preparation heating platform system. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a method for designing uCVD graphene preparation heating platform Main box body (1) Base heating micro-chip structure (2) Three-way joint (3) Methane pipe (4) First flow meter (5) First control valve (6) Exhaust pipe (10) Recycling pipe (11) Air pressure meter (12) Third control valve (13) Vacuum pump (14) Receiving groove (15) Controller (16)