• 专利标题:   Field emission element has emitter that is provided with pointed tip formed on substrate, and gate electrode having opening portion exposing tip of emitter formed on substrate via insulating layer, and comprises a polycrystalline, multilayer graphene film.
  • 专利号:   WO2023105899-A1, JP2023084299-A
  • 发明人:   MASAYOSHI N, HIROMASA M, KATSUHISA M, NAGAO M, MURATA H, MURAKAMI K
  • 专利权人:   NAT INST ADVANCED IND SCI TECHNOLOGY
  • 国际专利分类:   H01J001/304, H01J009/02
  • 专利详细信息:   WO2023105899-A1 15 Jun 2023 H01J-001/304 202351 Pages: 34 Japanese
  • 申请详细信息:   WO2023105899-A1 WOJP037103 04 Oct 2022
  • 优先权号:   JP198393

▎ 摘  要

NOVELTY - The field emission element (10) has an emitter (12) that is provided with a pointed tip formed on a substrate (11). A gate electrode (15) having an opening portion (15a) exposes the tip of the emitter formed on the substrate via an insulating layer (13,14). The gate electrode comprises a polycrystalline, multilayer graphene film. USE - Field emission element. ADVANTAGE - A field emission element is capable of avoiding discharge between an emitter and a gate electrode, thus suppressing adverse effect on other field emission elements even when discharge is caused. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of field emission element. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a field emission element. 10Field emission element 11Substrate 12Emitter 13,14Insulating layer 15Gate electrode 15aOpening portion