• 专利标题:   Manufacture of graphene for semiconductor element used for e.g. sensor involves immersing a pair of carbon electrodes in solvent, repeatedly generating spark discharge in pulses between electrodes, and forming graphene.
  • 专利号:   JP2017222538-A
  • 发明人:   MASHIMO S, HAYAMI S, TAKEHIRA H
  • 专利权人:   UNIV KUMAMOTO
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B032/15, C01B032/18, C01B032/182, H05H001/24
  • 专利详细信息:   JP2017222538-A 21 Dec 2017 C01B-032/15 201802 Pages: 18 Japanese
  • 申请详细信息:   JP2017222538-A JP119006 15 Jun 2016
  • 优先权号:   JP119006

▎ 摘  要

NOVELTY - A graphene is manufactured by immersing a pair of carbon electrodes in solvent, repeatedly generating spark discharge in pulses between the pair of carbon electrodes, and forming graphene from the pair of carbon electrodes. USE - Manufacture of graphene for semiconductor element used for field-effect transistor, sensor, electrode, fuel cell, solar cell, and capacitor, or separation membrane of gas or solution. ADVANTAGE - The methods can easily synthesize graphene or chemically modified graphene in large quantities at low cost. Preparation time of graphene can be shortened. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) manufacture of chemically modified graphene which involves immersing a pair of carbon electrodes in solvent containing atom constituting a chemical modification group, repeatedly generating spark discharge in pulses between the pair of carbon electrodes, and forming chemically modified graphene from the pair of carbon electrodes; and (2) graphene which is solid solution nanoparticle.