• 专利标题:   Graphene growth method involves sequentially forming conductor layer, insulating layer, carbon layer and semiconductor layer, applying voltage between semiconductor layer and conductive layer, heating, and growing carbon layer.
  • 专利号:   KR1449278-B1
  • 发明人:   CHOI J W
  • 专利权人:   UNIV KYUNGHEE IND COOP
  • 国际专利分类:   C01B031/02, C23C016/26
  • 专利详细信息:   KR1449278-B1 08 Oct 2014 C01B-031/02 201472 Pages: 9
  • 申请详细信息:   KR1449278-B1 KR048775 30 Apr 2013
  • 优先权号:   KR048775

▎ 摘  要

NOVELTY - Graphene growth method involves forming an insulating layer on a conductor layer, providing an amorphous carbon layer on the insulating layer, forming a semiconductor layer on the carbon layer, applying voltage between semiconductor layer and conductive layer, heating, and growing the carbon layer to graphene layer. USE - Graphene growth method (claimed). ADVANTAGE - The growing method of graphene is carried out economically by simple method without using complicated etching processing.