• 专利标题:   Layer stack used to grow graphene or carbon nanotubes that are used e.g. to make integrated circuit or printed circuit board interconnect, comprises substrate, protective layer, and attachment surface disposed between substrate and layer.
  • 专利号:   WO2015189575-A1, EP3152158-A1, US2017121177-A1
  • 发明人:   SILVA S R, AHMAD M
  • 专利权人:   UNIV SURREY
  • 国际专利分类:   C01B031/02, C01B031/04, C01B032/05, C01B032/182, C23C016/455, G11B005/64
  • 专利详细信息:   WO2015189575-A1 17 Dec 2015 C01B-031/02 201602 Pages: 77 English
  • 申请详细信息:   WO2015189575-A1 WOGB051634 05 Jun 2015
  • 优先权号:   GB010214

▎ 摘  要

NOVELTY - Layer stack (L1) for growing graphene or carbon nanotubes (CNTs), comprises a substrate, a protective layer, and an attachment surface disposed between the substrate and protective layer, where the protective layer is configured to allow carbon diffusion through it to the attachment surface, so that graphene or CNTs grow from them. USE - The layer stacks are useful for growing graphene or CNTs, which are useful: to manufacture graphene and/or CNT based integrated circuit or a printed circuit board interconnect (all claimed); and in vehicles/roofing, transistors, transparent conducting electrodes, fuel cells, membranes and electrodes, spin devices, field emission displays, corrosion free electrodes, and programmable in situ device fabrication. ADVANTAGE - The layer stacks: provide the CNTs or graphene, which exhibit high quality, high conductivity and mobility, and improved current-voltage characteristics; provide improved adhesion of the graphene or CNTs to the attachment surface; avoid the exposure of the catalyst layer to the atmosphere; and are reliable. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) manufacturing (M1) the layer stack (L1), comprising: (a1) providing the substrate; and (b1) depositing the protective layer on the substrate, so that an attachment surface is disposed between the substrate and the protective layer, thus creating the layer stack; (2) growing (M2) graphene or CNTs, comprising: (a1) providing the layer stack (L1); and (b1) allowing the graphene or CNTs to grow from the attachment surface; (3) a method (M3) for patterned graphene and/or CNT growth in a buried catalyst arrangement, comprising: (a2) depositing the protective layer on the substrate defining an attachment surface between them; (b2) depositing an additional layer on the protective layer; (c3) lithographically patterning the additional layer; (d2) carrying out etching of the additional layer; and (e3) allowing the graphene and/or CNTs to grow on the attachment surface; (4) growing (M4) CNTs, comprising: the step (a1) as above per se; and allowing CNTs to grow from the attachment surface, and separate at least a portion of the protective layer from the layer stack (L1); (5) manufacturing (M5) a graphene and/or CNT based integrated circuit or a printed circuit board interconnect, comprising: (a4) providing many layer stacks (L1); and (b4) growing the graphene and/or CNTs from the attachment surfaces, so that the graphene and/or CNTs are configured to act as a horizontal and vertical interconnect; and (6) a layer stack (L2) for growing graphene or CNTs, comprising the substrate, the protective layer, a cavity provided within the layer stack, and the attachment surface, where the protective layer is configured to allow carbon diffusion through it to both the cavity and the attachment surface, so that the graphene or CNTs grow from the attachment surface.