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  • 专利标题:   Growing graphene on big-diameter silicon carbide carbon surface involves polishing and cleaning silicon carbide wafer carbon surface, putting the wafer in graphite tray, pumping the degree of vacuum, and pouring high-purity argon.
  • 专利号:   CN102051677-A, CN102051677-B
  • 发明人:   HU X, XU X, CHEN X, WEI R
  • 专利权人:   UNIV SHANDONG
  • 国际专利分类:   C30B027/00, C30B029/02
  • 专利详细信息:   CN102051677-A 11 May 2011 C30B-027/00 201151 Pages: 8 Chinese
  • 申请详细信息:   CN102051677-A CN10541290 12 Nov 2010
  • 优先权号:   CN10541290

▎ 摘　　要

NOVELTY - Graphene is grown on big-diameter silicon carbide carbon surface by polishing and cleaning a silicon carbide wafer carbon surface, flatly putting the wafer in a graphite tray in a single crystal growth furnace crucible by upturning the carbon surface, pumping the degree of vacuum to 1x 10-7 mbar, fast raising the temperature to 1700-1750 degrees C, pouring high-purity argon, slowly raising the temperature to 1700-1750 degrees C, and keeping the temperature for 1-10 minutes to finish the growth of the graphene. USE - Method for growing graphene on big-diameter 6H-SiC carbon surface (claimed). ADVANTAGE - The method has no damage layers on the lining. The grown graphene is distributed on the whole surface of the lining, and the layer number of the graphene can be controlled to 1-10. The method is simple and easy to operate, and can prepare high-quality graphene. DETAILED DESCRIPTION - Growing graphene on big-diameter silicon carbide (6H-SiC) carbon surface involves polishing and cleaning wafer carbon surface with a diameter of 2-4 inches to ensure that the surface roughness of the carbon surface is smaller than 0.3 nm and the smoothness is smaller than 5 mu m to obtain 6H-SiC with a thickness of 300-400 mu m. The water is placed into a graphite tray in a single crystal growth furnace crucible. The degree of vacuum of the single crystal growth furnace is pumped to 1x 10-7 mbar. The temperature is increased to 1700-1750 degrees C at 50-100 degrees C/minute. High-purity argon with a flow rate of 1-10 L/minute is poured. The pressure is controlled at 800-900 mbar. The temperature is slowly increased to 1700-1750 degrees C at 0.1-10 degrees C/minute for 1-10 minutes to finish the growth of the graphene. The argon is closed and hydrogen is poured at a flow rate of 1-10 L/minute. The pressure is controlled at 800-900 mbar. The temperature is reduced to 1400 degrees C at 100-200 degrees C/minute. The hydrogen is closed and the single crystal growth furnace. Heating is stopped. The temperature is naturally reduced to room temperature.