▎ 摘　　要

NOVELTY - A graphene doped composite metallic ions defect type semiconductor photocatalyst is prepared by preparing graphite oxide using ultrasonic action to prepare mono-dispersed graphene oxide solution, dissolving zinc acetate, In(OAc)3, silver nitrate and L-cysteine in 50 mL deionized water, adding graphene oxide solution, fully and uniformly mixing, adding thioacetamide, transferring solution to 100 mL stainless steel reaction kettle with PTFE lining, hydrothermal reacting, centrifugally separating green precipitate, orderly washing by deionized water and ethanol water, and drying. USE - The method is used for graphene doped composite metallic ions defect type semiconductor photocatalyst preparation. ADVANTAGE - The product has clear structure, enhances visible light spectral response range of zinc thioindate, and inhibits hole pairs photogenerated electron-recombinant to enhance visible photocatalytic activity.