▎ 摘　　要

NOVELTY - Electronic device comprises semiconductor material layer; graphene-based electrode, disposed over portion of the semiconductor material layer, so that the graphene-based electrode forms overlap region with the semiconductor material layer; and unit for providing charge carriers in graphene-based electrode proximate to the overlap region, to reduce a difference between a work function of the graphene-based electrode and either: (i) the energy of the electronic conduction band of the semiconductor material layer; or (ii) the energy of electronic valence band of semiconductor material layer. USE - The electronic device is useful in transistors, high performance integrated circuit (IC) technologies, flexible electronics, display applications, large area electronics, digital medical imaging applications, and photovoltaic energy conversion devices, where the transistors are used as pixel addressing elements in large-area flat-panel displays, printing and scanning applications. ADVANTAGE - In the electronic device, the graphene can be configured to exhibit high intrinsic carrier mobility, high thermal conductivity, high Young's module, and high optical transmittance (about 97.7%). The graphene-based contacts and interconnects are highly conductive (both electrical and thermal), durable, and transparent, enabling promising applications in various types of electronics. The graphene-based electrodes as the contact materials, instead of or in addition to metals or metal oxides, can provide more robust electronics. Electrodes are formed from a graphene-based material that can be caused to exhibit continuously-varying values of work function. As a result, a graphene-based electrode can be configured to have a value of electron affinity that greatly reduces or even substantially eliminates a Schottky barrier between the graphene-based electrode and different types of semiconductor materials. The presence of the Schottky barrier can impede flow of charge carriers between the semiconductor and the metal. Unless the charge carriers possess an amount of energy at least high enough to overcome the Schottky barrier height, the Schottky barrier can have a rectifying effect. Reduction of the Schottky barrier height facilitates greater charge transfer between the semiconductor material and the metal material. A graphene-based material can be configured such that the Schottky barrier height between the graphene-based material and different types of semiconductor material is reduced, including being reduced to a minimum. This provides significantly greater flexibility in the fabrication of electronic devices, since it simplifies the type of materials used as the contact and/or interconnect in the electronic devices.