▎ 摘　　要

NOVELTY - A heterogeneous graphene-based device comprises 1st graphene stack with 1st lattice orientation and band gap energy above a threshold, 2nd graphene stack with 2nd lattice orientation different from 1st lattice orientation and one of (i) not having band gap energy and (ii) having de minimus band gap energy below the 1st threshold, and electrically conductive contact between 1st and 2nd graphene stacks in which mismatch between 1st lattice orientation and 2nd lattice orientation creates an electrical property limiting boundary between the 1st and 2nd graphene stacks. USE - A heterogeneous graphene-based device (claimed). ADVANTAGE - Devices made from greater than or equal to 1 graphene stacks can be integrated with various combinations of digital, analog, and radio frequency and microwave circuitry. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the manufacturing method of a heterogeneous graphene-based device containing two or more types of graphene with varying electrical properties on a single-substrate device. Formation of 1st patterned foundation material (3-1) Deposition and patterning of 1st foundation material on substrate (3-1a) Implant of 1st portions of substrate (3-1c) Formation of 2nd patterned foundation material (3-2) Growth of 1st and 2nd graphene stacks on respective 1st and 2nd foundation materials (3-3)