▎ 摘　　要

NOVELTY - Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing the copper foil substrate, removing the graphene of the copper foil substrate transferred to the cleaned sapphire substrate to obtain the substrate covering graphene, putting the substrate covering the graphene into the reaction chamber of the fog chemical vapour deposition system to epitaxially grow the gallium oxide layer, selecting gallium acetylacetonate with purity greater than 99.99 % as gallium source precursor for growing gallium oxide film, calculating the quality of gallium acetylacetonate according to the needed gallium concentration, and weighing the corresponding mass of gallium acetylacetonate for further use, putting the weighed gallium acetylacetonate into the liquid bottle. USE - Method for preparing transferable large size gallium oxide film. ADVANTAGE - The method enables to prepare transferable large size gallium oxide film with good atmospheric pressure and process repeatability. DETAILED DESCRIPTION - Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing the copper foil substrate, removing the graphene of the copper foil substrate transferred to the cleaned sapphire substrate to obtain the substrate covering graphene, putting the substrate covering the graphene into the reaction chamber of the fog chemical vapour deposition system to epitaxially grow the gallium oxide layer, selecting gallium acetylacetonate with purity greater than 99.99 % as gallium source precursor for growing gallium oxide film, calculating the quality of gallium acetylacetonate according to the needed gallium concentration, and weighing the corresponding mass of gallium acetylacetonate for further use, putting the weighed gallium acetylacetonate into the liquid bottle, and adding de-ionized water and concentrated hydrochloric acid according to the proportion of 100: 1, and then putting the magnetic force rotor into the solution bottle, placing on the magnetic stirrer to stir until there is no solid residue in the solution, growing gallium oxide film: controlling the fog chemical vapour deposition Mist-CVD device to put the substrate coated with graphene in the reaction cavity, introducing air as carrier gas, making the air full of the whole reaction cavity; adding the precursor solution into the atomizing tank, setting the reaction temperature in the reaction chamber to be 440-500degrees Celsius, the ultrasonic atomizing frequency of the atomizing tank is 1.7-2.4MHz, using the carrier gas to send the fog drop in the atomizing tank into the reaction chamber to deposit, growing the gallium oxide film with thickness of 1-3microm, peeling and transferring the gallium oxide layer from the graphene by heat release adhesive tape, slowly adhering the heat release adhesive tape on the surface of the gallium oxide epitaxial layer, peeling off the adhesive tape adhered with the gallium oxide epitaxial layer from the sapphire substrate uniformly, adhering the heat release tape adhered with gallium oxide on the target substrate tightly, heating the heating table to 120degrees Celsius, then placing the target substrate and the adhesive tape on the heating table for heating, making the heat release tape lose stickiness after foaming, the adhesive tape automatically separating from the gallium oxide surface and taking off the separated adhesive tape to obtain the gallium oxide film. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of implementing of a preparation method of transferable large size gallium oxide film. (Drawing includes non-English language text).