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  • 专利标题:   Manufacture of graphene film involves supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process.
  • 专利号:   JP2011168448-A, JP5407921-B2
  • 发明人:   FUJII K, SHIMIZU A
  • 专利权人:   FUJI ELECTRIC CO LTD, FUJI ELECTRIC CO LTD
  • 国际专利分类:   C01B031/04, C23C016/26, C01B031/02
  • 专利详细信息:   JP2011168448-A 01 Sep 2011 C01B-031/04 201159 Pages: 7 Japanese
  • 申请详细信息:   JP2011168448-A JP034150 19 Feb 2010
  • 优先权号:   JP034150

▎ 摘　　要

NOVELTY - A graphene film is manufactured by supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process. USE - Manufacture of graphene film. ADVANTAGE - The method manufactures graphene film which has high substrate option degree and can form large area into film on substrate.