▎ 摘　　要

NOVELTY - Preparation of graphene electrode molybdenum disulfide resonator involves pre-processing a silicon substrate, depositing a silica dielectric layer on the silicon substrate by chemical vapor deposition, cleaning and drying the deposited substrate, transferring a multilayer graphene onto a silica surface by dry method, etching the multilayer graphene into two left and right components by plasma method to form a graphene electrode, etching the silica dielectric layer by focused ion beam method, placing the processed substrate on a sizing disc, spin-coating a polymethylmethacrylate photoresist, drawing a resonant cavity pattern using an electron beam direct writer, exposing the mask area by electron beam exposure, developing and fixing the etched area, transferring a single-layer molybdenum disulfide resonance beam by dry method, cleaning the photoresist in a circular cavity, and annealing molybdenum disulfide. USE - Preparation of graphene electrode molybdenum disulfide resonator (claimed). ADVANTAGE - The method avoids Schottky barrier caused by contact between metal electrode and semiconductor, and produces graphene electrode molybdenum disulfide resonator without collapse during transfer of the resonance beam.