▎ 摘　　要

NOVELTY - Growing graphene layer structure on substrate involves providing a substrate on a susceptor in a chemical vapor deposition (CVD) reaction chamber, where the substrate has a first surface for contacting the susceptor and a second surface for the formation of a graphene layer structure, providing a carbon-containing precursor, heating the susceptor to achieve a temperature of the second surface sufficient to thermally decompose the precursor and below 940℃, and introducing the carbon-containing precursor into the reaction chamber to provide a flow of the precursor across the second surface to form the graphene layer structure on the second surface, where the substrate is a laminate wafer comprising a silicon support providing the first surface and a germanium layer providing the second surface, wherein the germanium layer has a thickness of at least 100 nanometer, and CVD reactor is a cold-walled reactor and the heated susceptor is the only source of heat in the reaction chamber. USE - Method for growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode (claimed). ADVANTAGE - The method can avoid need of additional hydrogen treatment, prevent diffusion of silicon to the growth surface, reliable, and more efficient process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an opto-electronic device, which comprises: a graphene electrode obtainable by the method of growing graphene layer structure on substrate, where the device is a solar cell, LED, OLED, electro-optic modulator (EOM), photodetector or diode.