▎ 摘　　要

NOVELTY - The device has a substrate (10) with a contact through groove. A catalyst layer (32) for carbon nanotube growth is formed on a bottom surface of groove. A carbon nanotube (CNT) through which is embedded in groove in which catalyst layer is formed by several carbon nanotubes. The carbon nanotubes are formed so that graphene layers are stacked in a state in which are inclined depthwise with respect to groove and ends of graphene layers are exposed on a sidewall of nanotube. The carbon nanotubes are doped with one element from sidewalls of carbon nanotubes. USE - Semiconductor device. ADVANTAGE - The element is efficiently doped from the side surface of each of the CNTs, thus reducing the resistance of the CNT. The auxiliary catalyst layer facilitates the formation of the CNTs, thus preventing diffusion of the components of the catalyst layer from the catalyst layer to the insulating film and an underlayer contact. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a manufacturing process of a semiconductor device. Substrate (10) Interconnect layer insulating film (12) Underlayer interconnect layer (15) Auxiliary catalyst layer (31) Catalyst layer (32)