▎ 摘　　要

NOVELTY - A graphene field-effect transistor producing method involves orderly forming graphene, grade medium layer and top grade metal electrode layer on substrate, etching the device for forming on the surface, removing the top gate electrode gate dielectric layer, followed by etching channel region of the graphene layer, damaging crystal structure of graphite material and the graphene layer, forming defective layer, forming metal layer on thin film devices formed on the metal thin film layer as source electrode and drain electrode, and carrying out annealing process to obtain the finished product. USE - Method for producing graphene field-effect transistor. ADVANTAGE - The method enables producing graphene field-effect transistor with improved performance. DETAILED DESCRIPTION - A graphene field-effect transistor producing method involves orderly forming graphene, grade medium layer and top grade metal electrode layer on substrate, utilizing top grade metal electrode layer as mask, etching the device for forming on the surface, removing the top gate electrode gate dielectric layer overlying the metal layer, followed by utilizing top gate electrode layer as a mask, etching channel region of the graphene layer, damaging crystal structure of graphite material and the graphene layer, forming defective layer, forming metal layer on thin film devices formed on the metal thin film layer as source electrode and drain electrode, and carrying out annealing process to obtain the finished product.