• 专利标题:   Carbonizing silicon substrate graphite alkene layer number testing method, involves calculating electron and photon diffraction integral intensities, calculating graphene sample thickness, and obtaining layer data of graphite sample.
  • 专利号:   CN105717148-A
  • 发明人:   DU Y, SUN X, WANG X, LIANG C, TIE J
  • 专利权人:   CHINA ELECTRONIC TECHNOLOGY GROUP CORP N, TIANJIN HENGDIAN SPACE POWER CO LTD
  • 国际专利分类:   G01N023/20
  • 专利详细信息:   CN105717148-A 29 Jun 2016 G01N-023/20 201649 Pages: 7 Chinese
  • 申请详细信息:   CN105717148-A CN10724610 03 Dec 2014
  • 优先权号:   CN10724610

▎ 摘  要

NOVELTY - The method involves calculating thickness of an epitaxial graphene sample pyrolysis silicon face. A sample is detected by using an X-ray photoelectron spectroscopy. Sample scanning range is about 280-290eV. Different photon diffraction receiving angle is selected. Photon integration strength is calculated. Electron and photon diffraction integral intensities are calculated. Graphene sample thickness is calculated. Layer data of the graphite sample is obtained. Incidence angle of f X-ray is about 45 degrees. USE - Carbonizing silicon substrate graphite alkene layer number testing method. ADVANTAGE - The method enables improving measuring accuracy and non-destructive testing accuracy. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a carbonizing silicon substrate. '(Drawing includes non-English language text)'