▎ 摘　　要

NOVELTY - The heterostructure has two graphene layers, an insulating layer and two semiconductor layers. The graphene layers are separated from the semiconductor layers by the insulating layer. The first graphene layer and the second graphene layer comprise a graphene e.g. pristine graphene and chemically modified graphene, or modified graphene, where the graphene layers are stacked sequentially in an order described to form a laminate structure, the heterostructure is mounted on a substrate, and thickness of the insulating layers is same in each case. USE - Graphene-based vertical heterostructure for use in an electronic device for LED applications. ADVANTAGE - The heterostructure exhibits extrinsic quantum efficiency of nearly 10% so as to enhance quantum efficiency in an efficient manner. The heterostructure increases overall thickness of a tunnel barrier and enhances probability for injected carriers to recombine radiatively. The heterostructure increases crystal quality of transition metal dichalcogenides and reduces graphene lead resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an architecture of single-quantum-well heterostructure.