• 专利标题:   Device for growing graphene comprises reaction cavity, air inlet mechanism, vacuum pumping mechanism, growth chamber, gas distributing chamber, growing substrate layer, electromagnetic valve and mixing chamber.
  • 专利号:   CN206428001-U
  • 发明人:   GAO H, HE H, MOU S, YIN T
  • 专利权人:   DEYANG CARBONERE TECHNOLOGY CO LTD
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN206428001-U 22 Aug 2017 C01B-032/186 201766 Pages: 7 Chinese
  • 申请详细信息:   CN206428001-U CN20073313 21 Jan 2017
  • 优先权号:   CN20073313

▎ 摘  要

NOVELTY - The utility model claims a device for growing graphene, comprising a reaction cavity, an air inlet mechanism and a vacuum pumping mechanism, fixedly provided with for the reaction cavity into evening sieve of the growth chamber and the mixing chamber in the reaction chamber, the growth chamber fixedly provided with growth substrate superposed, the intake mechanism and the vacuum pumping mechanism are connected through the electromagnetic valve and the mixing chamber. The utility model can make the air flow between each layer of growth substrate uniformly distributed, solves the problem that the graphene layer growth substrate in the growth process between airflow uniform property is bad.