▎ 摘　　要

NOVELTY - The method involves taking copper-based graphene obtained by chemical vapor deposition growth as a main body. Ammonium persulfate solution is used to corrode a copper foil to remove the graphene on a back of the copper-based graphene. Electrochemical corrosion is carried-out to the copper-based graphene after corrosion. Exfoliated graphene is acquired after removing a copper substrate, where concentration of the ammonium persulfate solution is 1-1.1 mole per liter, the graphene is deposited on a surface of the copper foil by chemical vapor deposition to form copper-based graphene, and the copper-based graphene is backed by low-quality graphene. USE - Method for realizing chemical vapor deposition graphene transferring process for manufacturing an electronic device and a high-performance battery, replacing a silicon electronic product and producing a transparent heating film. ADVANTAGE - The method enables transferring the graphene from the copper substrate to a surface of solution, reducing damage to the graphene, preparing large-size substrate-free graphene, reducing dosage of ammonium persulfate and bubble generating rate, and avoiding damage to the graphene. The addition of the ammonium sulfate to the electrolysis process removes copper particles that are not removed by electrolysis. The method ensuring that electrolytic solution is placed with a plastic gasket for attenuating convection of solution to constrain the graphene and reducing ion concentration of carrier graphene bearing solution by adding water to dilute, and satisfying requirement of concentration of inorganic salt ions in many applications. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic circuit block diagram of a device for realizing chemical vapor deposition graphene transferring process for manufacturing an electronic device and a high-performance battery, replacing a silicon electronic product and producing a transparent heating film. (Drawing includes non-English language text).