▎ 摘　　要

NOVELTY - The film has n-type/p-type dopants made of nitrogen, boron, phosphorus, fluorine, lithium, potassium and sulfur. The film is hetero-epitaxially grown directly or indirectly on a metal catalyst thin film with a single-orientation large-grain crystal structure and 1-10 atomic layers thick, and has sheet resistance of 10-20 ohms per square meter or less than 150 ohms per square meter. The catalyst thin film is etched off after a graphene is applied to a target substrate e.g. glass substrate. The catalyst thin film is directly and electrochemically anodized below the graphene. USE - Doped high electronic grade graphene thin film for solid-state solar cells. ADVANTAGE - The film reduces a need for black frits found in electro-chromic devices. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for making a doped graphene thin film. Step for crystallizing graphene (S101) Step for releasing/debonding graphene (S103) Step for transferring graphene to target substrate/surface (S105) Step for incorporating target substrate into product (S107)