• 专利标题:   Doped high electronic grade graphene thin film for solid-state solar cells, has n-type/p-type dopants made of nitrogen, boron and phosphorus, where film is grown directly or indirectly on metal catalyst thin film with crystal structure.
  • 专利号:   US2013309475-A1, US9418770-B2
  • 发明人:   VEERASAMY V S
  • 专利权人:   GUARDIAN IND CORP, GUARDIAN IND CORP
  • 国际专利分类:   H01B001/04, B82Y030/00, B82Y040/00, C01B031/04, C30B029/02, C30B031/02, C30B031/04, C30B031/22
  • 专利详细信息:   US2013309475-A1 21 Nov 2013 H01B-001/04 201378 Pages: 21 English
  • 申请详细信息:   US2013309475-A1 US942726 16 Jul 2013
  • 优先权号:   US461343, US942726

▎ 摘  要

NOVELTY - The film has n-type/p-type dopants made of nitrogen, boron, phosphorus, fluorine, lithium, potassium and sulfur. The film is hetero-epitaxially grown directly or indirectly on a metal catalyst thin film with a single-orientation large-grain crystal structure and 1-10 atomic layers thick, and has sheet resistance of 10-20 ohms per square meter or less than 150 ohms per square meter. The catalyst thin film is etched off after a graphene is applied to a target substrate e.g. glass substrate. The catalyst thin film is directly and electrochemically anodized below the graphene. USE - Doped high electronic grade graphene thin film for solid-state solar cells. ADVANTAGE - The film reduces a need for black frits found in electro-chromic devices. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for making a doped graphene thin film. Step for crystallizing graphene (S101) Step for releasing/debonding graphene (S103) Step for transferring graphene to target substrate/surface (S105) Step for incorporating target substrate into product (S107)