▎ 摘　　要

NOVELTY - The structure (100) has a dielectric layer (120) formed with a trench (120a), where a conductive line (140) is arranged in the trench. A first cap layer is formed on an upper surface of the conductive line, and comprises a graphene-metal composite that comprises graphene (151) and metal mixed with together. The graphene-metal composite comprises metal particles (152) that are arranged in the graphene. The dielectric layer comprises a dielectric material, where dielectric constant of the dielectric material is measured to be 3.6 or less. A second cap layer is formed in the trench on a lateral surface of the conductive line and a lower surface of the conductive line. A barrier layer (130) is formed on the conductive line, where the barrier layer covers the lateral surface of the conductive line and the lower surface of the conductive line. USE - Interconnect structure for an electronic device (claimed). ADVANTAGE - The structure utilizes the cap layer to reduce resistance of the conductive line and improve electro-migration resistance of the conductive line so as to improve utilization reliability of the structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an interconnect structure. 100Interconnect structure 120Dielectric layer 120aTrench 130Barrier layer 140Conductive line 151Graphene 152Metal particles