• 专利标题:   Graphene/monoatomic layer GaS/gallium arsenide wireless generator has edge electrode whose area is smaller than that of graphene layer, and electrode whose area is smaller than that of gallium arsenide layer.
  • 专利号:   CN111641275-A
  • 发明人:   LIN S, XUAN Y, CHEN H, CHEN Y, ZHENG H, LU Y
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   H01L031/0336, H01L031/115, H02J050/20
  • 专利详细信息:   CN111641275-A 08 Sep 2020 H02J-050/20 202080 Pages: 13 Chinese
  • 申请详细信息:   CN111641275-A CN10435399 21 May 2020
  • 优先权号:   CN10435399

▎ 摘  要

NOVELTY - The generator has two portions which includes a gallium arsenide layer and a graphene layer. The gallium arsenide layer is passivated by ammonium sulfide. A monoatomic layer of gallium sulfide is formed on surface. A first electrode is provided on the back of the gallium arsenide layer. One side is in direct contact with the monoatomic gallium sulfide surface of the gallium arsenide layer to form a heterojunction and a side electrode on the other side. The area of the edge electrode is smaller than that of the graphene layer. The area of the first electrode is smaller than that of the gallium arsenide layer. USE - Graphene/monoatomic layer GaS/gallium arsenide wireless generator. ADVANTAGE - Graphene/monoatomic layer GaS/gallium arsenide wireless generator with more flexible, more efficient, and simple device structure is achieved. DETAILED DESCRIPTION - METALLURGY - The first electrode and the side electrode are selected from one or several of gold, palladium, silver, titanium, chromium, nickel, platinum and aluminum. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view representing the current change curve of the gallium wireless generator in the switching state of the transmitting source.