• 专利标题:   Producing nitrogen-doped graphene, useful in optical and/or electrical devices, comprises coating carbon and nitrogen sources on a surface of copper catalyst and then introducing into a non-oxidizing gas reactor and reacting the mixture.
  • 专利号:   CN104108706-A
  • 发明人:   HE B, YAN S, WANG C
  • 专利权人:   CHINESE ACAD SCI CHEM INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104108706-A 22 Oct 2014 C01B-031/04 201503 Pages: 13 Chinese
  • 申请详细信息:   CN104108706-A CN10334922 15 Jul 2014
  • 优先权号:   CN10334922

▎ 摘  要

NOVELTY - Producing nitrogen-doped graphene comprises coating carbon and nitrogen sources on a surface of copper catalyst or placing carbon and nitrogen sources on a copper catalyst and then continuously introducing into a non-oxidizing gas reactor and reacting the mixture at a temperature of 600-900 degrees C. USE - The method is useful for producing nitrogen-doped graphene, which is useful in the manufacture of optical and/or electrical devices (all claimed) such as FET. ADVANTAGE - The method is capable of simply and economically producing the large area nitrogen-doped graphene with high quality and improved electrical characteristics and light transmittance in an industrial manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the nitrogen-doped graphene prepared by the method.