▎ 摘　　要

NOVELTY - Preparing silicon carbide nanowires p-n junction function composite network film on copper foil-graphene substrate comprises (a) dissolving polycarbosilane and vinyl compound in an organic solvent, under the condition of no oxygen at 70-90?? C, Karstedt catalyst catalytic reaction for 4-8 hours to obtain the polycarbose and vinyl compounds, drying to obtain a polycarbase/carbon precursor gas gel, (b) weighing 1-5 g of silicon carbose gas gel in step (a), respectively in acetone and deionized water 10-20 minutes, soaking in 100-500 mL of 98% hydrofluoric acid solution, ultrasonically dispersing for 0.5-3 hours under the irradiation of ultraviolet light, after finishing ultrasonic, standing for 30-500 min, pouring out the supernatant (90-450 mL) to a beaker, the rest solution into solution A, placing electrode in electrophoresis liquid containing nano-wire with different doping types, and combining electrophoretic deposition. USE - Method for preparing silicon carbide nanowire network p-n junction film on copper foil-graphene substrate. ADVANTAGE - The method has simple technique, low cost, large film area, high efficiency and safe and easy operation, and is good for commercial large-scale production. The two-dimensional network knitting structure with macroscopic size has more excellent performance than the structure composed of more than micron. The method provides an effective way of assembling nano-structure from bottom to top, and has a certain universality for the low-dimensional nano structure, can be used for preparing other semiconductor nano-film. DESCRIPTION OF DRAWING(S) - The drawing shows a photgraphic view of the method for preparing silicon carbide nanowire network p-n junction film on copper foil-graphene substrate.