▎ 摘　　要

NOVELTY - The device has a substrate (1) fixedly connected with an insulating layer (2). A tin diselenide layer (3) is connected with the insulating layer. A tungsten diselenide layer (4) is fixedly connected with an upper surface of the tin diselenide layer. A side of the tungsten diselenide layer is connected with an upper surface of the insulating layer. A graphene layer (5) is covered on an upper surface of the tungsten diselenide layer. A side of the graphene layer is connected to an upper surface of the insulating layer. A first metal electrode (6) is located on the upper surface of the insulating layer. A second metal electrode is located on the upper surface of the insulating layer and connected with a side of the graphene layer. USE - Graphene/tungsten diselenide/tin diselenide laminated structure based photoelectric device. ADVANTAGE - The device has simple structure, less grid voltage regulation, high light responsiveness and gain and rapid response speed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene/tungsten diselenide/tin diselenide laminated structure based photoelectric device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a graphene/tungsten diselenide/tin diselenide laminated structure based photoelectric device. (Drawing includes non-English language). Substrate (1) Insulating layer (2) Tin diselenide layer (3) Tungsten diselenide layer (4) Graphene layer (5) Metal electrode (6)