▎ 摘　　要

NOVELTY - The method involves depositing a grid medium layer and a grid metal electrode in a graphene. A passivation protection layer is deposited using selective etching of the passivation protecting layer above the grid medium layer. A gate metal electrode side wall, a passivation protection layer part and grid medium layer are provided to a corrosion process. A gate metal cover is removed from the grid medium layer. A metal forming source is deposited on a drain metal electrode. USE - Graphene FET device manufacturing method. ADVANTAGE - The method enables reducing a distance between the gate source and gate drain so as to reduce parasitic resistance path to increase graphene top gate FET device performance. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a graphene FET device manufacturing method. '(Drawing includes non-English language text)'