▎ 摘　　要

NOVELTY - Graphene-based field effect transistor (FET) fabrication involves providing FET comprising a channel material on a substrate, the channel material comprising graphene, a gate located on a first portion of the channel material, and a contact aligned to the gate, the contact being located over a source region and a drain region of the FET, the source region and the drain region comprising a second portion of the channel material. The contact comprises a metal carbide having been formed from a carbon material positioned on the source region and the drain region. It involves providing FET comprising a channel material on a substrate, the channel material comprising carbon nanotube, a gate located on a first portion of the channel material, and a contact aligned to the gate, the contact being located over a source region and a drain region of the FET, the source region and the drain region comprising a second portion of the channel material. USE - The method is useful fo graphene-based FET fabrication (claimed). ADVANTAGE - A self-aligned method is provided for forming FET having a relatively low contact resistance.