▎ 摘　　要

NOVELTY - The composite structure has a doped semiconductor epitaxial layer (03) that is formed on polymer flexible substrate layer (02). A bottom of aluminum oxide insulating-active zone structure is provided with aluminum oxide insulating layer (04) which is mounted with graphene microstructure layer (05) and a metal microstructure layer (06). The metal microstructure layer is arranged inside graphene microstructure layer at specific intervals, to form active region structure. A metal layer is deposited on top of active region structure, for forming upper metal electrodes. USE - Terahertz modulator based graphene-metal composite structure. ADVANTAGE - The effective adjustment of the terahertz wave can be realized. The high quality factor of the modulator and good adjustable performance and larger modulation depth can be achieved. DETAILED DESCRIPTION - The Terahertz modulator back electrode and aluminum oxide insulation-active zone structure composite layer are formed on the doped semiconductor epitaxial layer. An INDEPENDENT CLAIM is included for a preparation method of graphene-metal composite structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic circuit diagram of graphene-metal composite structure. (Drawing includes non-English language text) Polymer flexible substrate layer (02) Doped semiconductor epitaxial layer (03) Aluminum oxide insulating layer (04) Graphene layer structure (05) Metal micro-structure layer (06)