• 专利标题:   LED, has metal oxide layer whose lower surface is connected to honeycomb-shape structure, and projection layer located on graphene layer and upper surface of P-type contact layer to form eutectic structure.
  • 专利号:   CN105591001-A, WO2017107553-A1, CN105591001-B
  • 发明人:   KE R, ZHANG J, CAO Y, HUANG Q, QIU Z, LIANG X, CHANG C, CHIU C, HUANG C, KO J, LIANG H
  • 专利权人:   ANHUI SANAN OPTOELECTRONICS CO LTD, XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY, ANHUI SANAN OPTOELECTRONICS CO LTD
  • 国际专利分类:   H01L033/00, H01L033/14, H01L033/42
  • 专利详细信息:   CN105591001-A 18 May 2016 H01L-033/14 201640 Pages: 6 Chinese
  • 申请详细信息:   CN105591001-A CN10984808 25 Dec 2015
  • 优先权号:   CN10984808

▎ 摘  要

NOVELTY - The LED has a substrate arranged with an N-type layer, a luminous layer, P-type layer, a transparent electric conduction layer, an N-type electrode and a P-type electrode. The transparent electric conduction layer is provided with a graphene layer and located on a graphite layer of a metal oxide layer. The graphene layer is fixed with an opening honeycomb-shaped structure. A lower surface of the metal oxide layer is connected to the honeycomb-shape structure. A projection layer is located on the graphene layer and an upper surface of a P-type contact layer to form a eutectic structure. USE - LED. ADVANTAGE - The LED reduces contact resistance of the transparent electric conduction layer and the P-type layer, thus improving electric current expansion capacity of the transparent electric conduction layer. DETAILED DESCRIPTION - The N-type layer and the P-type layer are made of gallium nitride, gallium arsenide and gallium phosphide materials. The metal oxide layer is made of indium tin oxide, IZO and gallium doped zinc oxide materials. An INDEPENDENT CLAIM is also included for an LED manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of an LED.