▎ 摘　　要

NOVELTY - Quantum dot luminescent layer comprises a quantum dot material and a host material, the quantum dot material including a first quantum dot. The host material is filled in the gap between the first quantum dots; where the first quantum dot is a core-shell quantum dot, including a core layer and a shell layer. The bandgap width of the host material is greater than or equal to the bandgap width of the shell layer material of the first quantum dot. USE - The quantum dot luminescent layer is useful in quantum dot light emitting diode (QLED) device. ADVANTAGE - The quantum dot luminescent layer improves current efficiency and stability of a quantum dot light emitting diode (QLED). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: preparing quantum dot luminescent layer comprising (i) using quantum dot material to prepare the quantum dot light emitting layer film, and (ii) using continuous ion layer adsorption reaction method to fill the main body material into the gap between the quantum dots in the quantum dot light emitting layer film, obtaining the quantum dot light emitting layer; and a quantum dot light emitting diode device, comprising anode-cathode quantum dot light emitting layer disposed between the anode and the cathode, where the quantum dot light emitting layer comprises a quantum dot material and a main body material, the quantum dot material comprises a first quantum dot, the main body material is filled in the gap between the first quantum dots, the first quantum dot is core-shell quantum dot, comprising a core layer and a shell layer, the band gap width of the main body material is greater than or equal to the band gap width of the shell layer material of the first quantum dot, or the quantum dot light emitting layer is prepared by (i) using quantum dot material to prepare a quantum dot light emitting layer film, and (ii) using continuous ion layer adsorption reaction method to fill the main body material into the gap between the quantum dots in the quantum dot light emitting layer film, and obtaining the quantum dot light emitting layer.