• 专利标题:   Making metal-doped graphene involves preparing asphaltene thin film on metal catalyst substrate, and heating asphaltene thin film/catalyst to form metal-doped graphene.
  • 专利号:   US2016304350-A1, US9862609-B2
  • 发明人:   DEEMER E M, CHIANELLI R R
  • 专利权人:   UNIV TEXAS SYSTEM
  • 国际专利分类:   C01B031/04, C25B011/04, H01B001/04, H01F001/03, H01M004/90, B82Y030/00, B82Y040/00
  • 专利详细信息:   US2016304350-A1 20 Oct 2016 C01B-031/04 201672 Pages: 46 English
  • 申请详细信息:   US2016304350-A1 US960324 04 Dec 2015
  • 优先权号:   US087695P, US960324

▎ 摘  要

NOVELTY - Metal-doped graphene is made by preparing an asphaltene thin film on a metal catalyst substrate; and heating the asphaltene thin film/catalyst at greater than or equal to 400 degrees C and at pressures of greater than or equal to 1x 10-3 torr to form metal-doped graphene. USE - The method is useful for making metal-doped graphene (claimed) and metal-doped graphene derivatives from pitch. The metal-doped graphene or composition is useful in conductive, transparent film used in applications such as transparent electrodes for touch screens or solar cells; useful in surface area component of an electrode for applications such as fuel cells, super-capacitors and lithium ion batteries; useful in additive for mechanical, electrical, thermal, barrier and fire resistant properties of a polymer; useful in band gap engineering components electronic applications related to semiconducting; and useful in catalytic materials. ADVANTAGE - Not only does the material produced by the method, disperse in solution, it is not oxidized and so it does not need reduction. The fact that it is not oxidized eliminates producing materials using very strong acids and thus also eliminates neutralizing and washing steps. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a metal-doped graphene produced by the method above.