▎ 摘　　要

NOVELTY - Two-step continuous reduction process for growing graphene oxide film on silicon substrate comprises (1) placing a graphene oxide film together with silicon substrate in hydroiodic acid solution, and heating in water bath at constant temperature to obtain reduced graphene oxide film and silicon substrate; (2) taking out the reduced graphene oxide film and silicon substrate obtained in the step (1), placing them to obtain a treated film and substrate; and (3) placing the film obtained in the step (2) together with the substrate in a tube sintering furnace, introducing the mixed gas of argon gas and hydrogen gas, heating and reacting, cooling to room temperature, and taking out. USE - The method is useful for two-step continuous reduction process for growing graphene oxide film on silicon substrate. ADVANTAGE - The method: can obtains reduced graphene oxide film has no damage.