• 专利标题:   Preparation of doped graphene fiber used for e.g. energy memory card, involves stirring graphene solution to obtain graphene spinning solution, sucking graphene spinning solution into syringe and adding solution in coagulation bath.
  • 专利号:   CN107268120-A
  • 发明人:   GUO W, HUANG H, WANG Z
  • 专利权人:   HEFEI HONGDING TECHNOLOGY CO LTD
  • 国际专利分类:   D01F001/10, D01F009/12
  • 专利详细信息:   CN107268120-A 20 Oct 2017 D01F-009/12 201779 Pages: 6 Chinese
  • 申请详细信息:   CN107268120-A CN10628362 28 Jul 2017
  • 优先权号:   CN10628362

▎ 摘  要

NOVELTY - The preparation of doped graphene fiber involves stirring graphene solution to obtain graphene spinning solution, sucking graphene spinning solution into syringe, controlling spinning speed by flow pump, adding spinning solution in coagulation bath for wet spinning process to obtain main graphene fiber, carrying out coagulation treatment of main graphene fiber, drying and winding onto cheese, natural drying to obtain graphene fiber, placing catalyst-mixed graphene fiber on substrate in oxygen-free reactor, heating, and adding carbon element and element-doped substance to reactor. USE - Preparation of doped graphene fiber used for superconducting, energy memory card, photoelectric conversion application. ADVANTAGE - The method enables preparation of doped graphene fiber with high productivity, high conductivity and mass productivity by simple, easy and short process, and improves the carrier concentration of graphene fiber. DETAILED DESCRIPTION - The preparation of doped graphene fiber involves stirring concentration of 10-30 mg/ml graphene solution at 30-70 degrees C to obtain graphene spinning solution, sucking graphene spinning solution into syringe, controlling spinning speed by flow pump, adding spinning solution through spinning hole in coagulation bath for wet spinning process to obtain main graphene fiber, carrying out coagulation treatment of main graphene fiber, drying and winding onto the cheese, natural drying to obtain graphene fiber, placing catalyst-mixed graphene fiber on substrate in oxygen-free reactor, heating at 800-1500 degrees C, and adding carbon element and element-doped substance to reactor.