▎ 摘　　要

NOVELTY - The transistor has a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a source electrode (410a) and a drain electrode (410b) disposed on the gate insulating layer, and an active layer pattern disposed on a portion of the gate insulating layer, the source electrode and the drain electrode. The active layer pattern includes graphene and a semiconductor oxide. USE - Transistor used in display device (claimed). ADVANTAGE - Achieves high reliability since characteristics of the graphene is easily controlled, so that deterioration of electrical characteristics is prevented. Provides display device having reduced thickness, enhanced resolution of images, and improved operating speed of images. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a transistor manufacturing method; and (2) a display device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the display device including the transistor. Source electrode (410a) Drain electrode (410b) Pixel defining layer (440) Light emitting structure (450) Protecting layer (470)