▎ 摘　　要

NOVELTY - The method involves providing a silicon wafer substrate, where the silicon wafer substrate is made of ammonia water, hydrochloric acid, hydrogen peroxide, and de-ionized water. The silicon wafer substrate is cleaned, where thickness of a dielectric layer of the substrate is 300 to 500 nm. A chemical dispersion process is utilized to prepare a graphene nano material. The prepared graphene nano material is formed into a single layer graphene, where the thickness of the single layer graphene is 200 nm. USE - Graphene-containing electrode material preparation method for a phase change memory. ADVANTAGE - The method enables reducing contact area so as to reduce device operation current and power consumption. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene-containing electrode material.