▎ 摘　　要

NOVELTY - The method involves etching a groove (102) on a substrate (101). The grooves are etched with a connecting groove. The groove on the substrate surface of upper transfer layer is completely covered by a graphene thin film (105). An air space is located in the groove on the graphene thin film. The sides of the graphene thin film are deposited with layer of conductive material. The sides of the graphene thin film are used as a source electrode (106) and a drain electrode (107). The conductive material is made of metal, semiconductor or polymer material. USE - Method for preparing groove structure of graphene channel transistor. ADVANTAGE - Since the graphene trench of the substrate is avoided, the performance of graphene transistor is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the process for preparing groove structure of graphene channel transistor. Substrate (101) Groove (102) Graphene thin film (105) Source electrode (106) Drain electrode (107)