• 专利标题:   Two-layer floating gate flexible organic memory device comprises substrate that comprises polyethylene terephthalate, and dielectric layer, barrier layer, spacer layer, and tunneling layer that comprise graphene oxide.
  • 专利号:   CN105576124-A, CN105576124-B
  • 发明人:   PENG Y, WEI Y, TANG Y, MA L
  • 专利权人:   UNIV CHINA JILIANG, UNIV CHINA JILIANG
  • 国际专利分类:   H01L051/05, H01L051/30, H01L051/40
  • 专利详细信息:   CN105576124-A 11 May 2016 H01L-051/05 201664 Pages: 7 English
  • 申请详细信息:   CN105576124-A CN10031126 14 Jan 2016
  • 优先权号:   CN10031126

▎ 摘  要

NOVELTY - A two-layer floating gate flexible organic memory device comprises a substrate, a dielectric layer, a control gate, a barrier layer, a floating gate layer (i), a spacer layer, a floating gate layer (ii), a tunneling layer, an organic semiconductor layer, a source electrode and a drain electrode. The substrate material is polyethylene terephthalate. The dielectric layer, barrier layer, spacer layer, and tunneling layer comprise graphene oxide. The control gate, source electrode, and drain electrode comprise graphene. The organic semiconductor material layer comprises pentacene. USE - Two-layer floating gate flexible organic memory device (claimed). ADVANTAGE - The environmentally-friendly two-layer floating gate flexible organic memory device has large operating voltage range, less leakage current, and excellent stability, and is prepared by simple process at low cost with high yield. DETAILED DESCRIPTION - A two-layer floating gate flexible organic memory device comprises a substrate, a dielectric layer, a control gate, a barrier layer, a floating gate layer (i), a spacer layer, a floating gate layer (ii), a tunneling layer, an organic semiconductor layer, a source electrode and a drain electrode. The source electrode and drain electrode are located on the tunneling layer. The substrate material is polyethylene terephthalate. The dielectric layer, barrier layer, spacer layer, and tunneling layer comprise graphene oxide. The control gate, source electrode, and drain electrode comprise graphene. The organic semiconductor material layer comprises pentacene. An INDEPENDENT CLAIM is included for preparation of two-layer floating gate flexible organic memory device.